当前位置:网站首页>Basic knowledge of nonvolatile MRAM

Basic knowledge of nonvolatile MRAM

2020-12-07 16:19:25 Yingshang Microelectronics

MRAM It's a nonvolatile magnetic random access memory . It has static random access memory (SRAM) High speed read and write capabilities of ; And dynamic random access memory (DRAM) High integration of , And basically it can be written over and over again indefinitely .
 
MRAM characteristic
●MRAM read / Write cycle time :35ns;
● Really unlimited erasure use ;
● The industry's longest lifetime and data retention time —— exceed 20 The nonvolatile nature of ;
● The maximum capacity of a single chip is 16Mb;
● Fast 、 Simple interface ——16 Bit or 8 Bit parallel SRAM、40MHz High speed serial SPI Interface ;
● Cost effective —— It's as simple as one transistor 、 A magnetic tunneling junction (1T-1MTJ) Bit unit ;
● The best level of soft error rate —— Much better than other memory ;
● It can replace many kinds of memory —— Set Flash、SRAM、EEPROM、DRAM It's all in one ;● Commercial grade 、 Industrial grade 、 Optional temperature ranges for extended and automotive grades ;
● accord with RoHS standard : No battery 、 unleaded ;
● Small package :TSOP、VGA、DFN
 
MRAM Storage principle
MRAM It's a magnetic tunnel junction (MTJ) Storage unit based .MTJ It contains a fixed layer that maintains a single polarity direction , And a free layer separated from it by a tunnel junction . When the free layer is polarized in the same direction as the fixed layer ,MTJ The tunnel junction will show low resistance ; conversely MTJ There will be high resistance . This makes the magnetoresistance effect MRAM There is no need to change the memory state , It can read data quickly . When the current flowing through the two wires is enough to switch MTJ In the magnetic field , At the intersection of two wires MTJ Will be polarized ( write in ). This process can take SRAM The speed of finishing .
 

 
MRAM The advantages of
Advantage 1 :
Its magnetic polarization is different from the traditional charge storage , Effectively avoid the problem of electric charge leakage , So that the data can be stored for a long time in a wide temperature range .
Advantage 2 :
The magnetic polarization switching between the two states does not involve the actual movement of electrons or atoms , So there is no depletion mechanism .
Advantage 2 :
The magnetic polarization switching between the two states does not involve the actual movement of electrons or atoms , So there is no depletion mechanism .
 
Nonvolatile memory - Serial mram
Typical circuit examples —MR25H40 4Mbit MRAM
 

 
Nonvolatile memory - parallel mram
Typical circuit examples —MR2A16A 256K×16 MRAM
 

 
Nonvolatile memory -MRAM The selection
 

 
Nonvolatile memory -MRAM Application
 

 
MRAM Use of
MRAM It's a ferromagnetic memory , In use , Should try to avoid strong magnetic materials, otherwise high voltage and high current conductor short distance contact , Otherwise, it is easy to cause internal data loss and even chip damage .
 

 

 
Everspin It's professional design and manufacturing MRAM and STT-MRAM The top of , Its market and application areas involve data persistence and integrity , Low latency and security are critical .Everspin In the data center , Cloud storage , energy , Industry , More than 1.2 One hundred million MRAM and STT-MRAM product , by MRAM Users lay a strong foundation .Everspin The first level agent Yingshang microelectronics can provide technical support such as driver and routine for users .

版权声明
本文为[Yingshang Microelectronics]所创,转载请带上原文链接,感谢
https://chowdera.com/2020/12/20201207161542463t.html