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Characteristics of magnetic memory chip STT-MRAM

2020-11-06 22:06:04 DISPLAY

With the continuous progress of semiconductor technology , The continuous evolution of chip process and the continuous reduction of cost , Semiconductor chips are widely used in the Internet of things 、 Personal terminal 、 Automotive electronics 、 Wearable device 、 Industrial Internet and other fields . With the gradual upgrading of chip technology , Performance is no longer the main bottleneck in chip design , For example, in many handheld devices , Low power design has become a key issue in chip design . By introducing a chip architecture based on magnetic memory chip as internal storage device , At the same time, it is also used as the internal cache of the chip , Can effectively reduce chip leakage current , It effectively improves the service time of the equipment , Reduces the overall TCO cost , Greatly enhance the competitiveness of products .
 
In many new nonvolatile storage media , Magnetic memory chip (STT-MRAM) Can and CMOS Semiconductor technology is well compatible , High density integration of storage cells can be achieved with less metal layers . And because it's close to SRAM (SRAM) Reading and writing speed ﹑ Extremely low static and dynamic power consumption 、 It is not easy to lose power 、 It's close to an infinite number of erasures , High temperature data holding ability for a long time and resistance to strong magnetic field radiation and other characteristics , As an enterprise SSD Data cache and FTL A naturally good medium for table item storage .
 
At present, many semiconductor design companies will MRAM Chip as the next generation of nonvolatile storage media research and development focus . Except TSMC 、 Samsung and Toshiba have been pushing on STT-MRAM In addition to R & D of , In the United States  Everspin MRAM The company has already released mass production STT-MRAM chip .
 
Will be embedded STT-MRAM Application in chip architecture design , Make full use of its characteristics of non-volatile data when power down , It can completely turn off the power of the storage part , Thus, the leakage current and static power consumption of the whole chip are significantly reduced .  

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